进击的邹同学的《Abstract for new memory device》成绩 - 打字成绩 - 在线打字练习(dazi.91xjr.com)

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This achievement: 2025/ 2/ 1 Sat
English Article Word Count Duration Accuracy Speed Backspace Error Slogan
Abstract for new memory device 1508 30.0分钟 100% 93 CPM 204 4 不及格,加强练习!
The wrong word this time: ),.,S,2
Suggestion:
可能对按键不够熟悉,或者对输入法不够熟练所导致,不要急慢慢来,先打对把准确率提高,然后逐渐的加快速度,最后才能打准打快。
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Article intro
Non-volatile resistive switching, also known as memristor effect, where an electric field switches the resistance statesof a two-terminal device, has emerged as an importantconcept in the development...
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