Non-volatile resistive switching, also known as memristor effect,
where an electric field switches the resistance statesof a two-terminal device,
has emerged as an importantconcept in the development...
| English Article | Word Count | Duration | Accuracy | Speed | Backspace | Error | Slogan |
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| 《Abstract for new memory device》 | 1508字 | 30.0分钟 | 100% | 93 CPM | 204 次 | 4 | 不及格，加强练习！ |
| The wrong word this time: ),.,S,2 | |||||||
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Suggestion:
可能对按键不够熟悉，或者对输入法不够熟练所导致，不要急慢慢来，先打对把准确率提高，然后逐渐的加快速度，最后才能打准打快。
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| Inspirational quotes: 如果你害怕失败，你就会失败。 ——科比 | |||||||
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