小键人5680414的《Abstract for new memory device》成绩 - 打字成绩 - 在线打字练习(dazi.91xjr.com)

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This achievement: 2024/ 12/ 2 Mon
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Abstract for new memory device 1508 29.0分钟 100% 151 CPM 94 0 及格,继续努力!
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Article intro
Non-volatile resistive switching, also known as memristor effect, where an electric field switches the resistance statesof a two-terminal device, has emerged as an importantconcept in the development...
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