Non-volatile resistive switching, also known as memristor effect,
where an electric field switches the resistance statesof a two-terminal device,
has emerged as an importantconcept in the development...
English Article | Word Count | Duration | Accuracy | Speed | Backspace | Error | Slogan |
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《Abstract for new memory device》 | 1508字 | 29.0分钟 | 100% | 151 CPM | 94 次 | 0 | 及格,继续努力! |
Suggestion:
可能对按键不够熟悉,或者对输入法不够熟练所导致,不要急慢慢来,先打对把准确率提高,然后逐渐的加快速度,最后才能打准打快。
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Inspirational quotes: 将欲取之,必先与之。 ——老子 | |||||||
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