Non-volatile resistive switching, also known as memristor effect,
where an electric field switches the resistance statesof a two-terminal device,
has emerged as an importantconcept in the development...
| English Article | Word Count | Duration | Accuracy | Speed | Backspace | Error | Slogan |
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| 《Abstract for new memory device》 | 1508字 | 14.0分钟 | 100% | 171 CPM | 265 次 | 5 | 良好，向更快挑战！ |
| The wrong word this time: n,d,c,s,. | |||||||
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Suggestion:
可能对按键不够熟悉，或者对输入法不够熟练所导致，不要急慢慢来，先打对把准确率提高，然后逐渐的加快速度，最后才能打准打快。
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